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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION With TO-220C package Complement to type BD241/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD242 BD242A BD242B VCBO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage GE S BD242C BD242 BD242A BD242B BD242C Open emitter EMIC OND TOR UC VALUE -55 -70 -90 -115 -45 -60 UNIT V VCEO Open base -80 -100 Open collector -5 -3 -5 -1 TC=25ae 40 150 -65~150 ae ae V VEBO IC ICM IB PC Tj Tstg V A A A W Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD242 BD242A IC=30mA; IB=0 BD242B BD242C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD242/A ICEO Collector cut-off current IC=-3A;IB=-0.6 A IC=-3A ; VCE=-4V VCE=-30V; IB=0 -0.3 VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 VCE=-80V; VBE=0 mA -80 -100 -1.2 -1.8 V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage ICES BD242B/C BD242 BD242A Collector cut-off current IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IN ANG CH BD242B BD242C SEM E OND IC TOR UC -0.2 mA -1 mA VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 25 10 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD242/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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